Di-N-Ctyl Dichlorosilane

Catalog Number	ACM18416074-3
CAS Number	18416-07-4
Synonyms	Di-N-CTyl Dichlorosilane
Molecular Weight	325.43 g/mol
Molecular Formula	C16H34Cl2Si
Purity	0.95
Appearance	Clolorless liquid
Application	Di-N-Octyl Dichlorosilane serves as a critical component in the electronics industry particularly for its role in the growth of epitaxial or polycrystalline silicon and in the chemical vapor deposition of silicon dioxide and silicon nitride This compound is highly valued because it deposits silicon efficiently at lower temperatures compared to other chlorosilanes like trichlorosilane or silicon tetrachloride resulting in better efficiency and reduced processing time for thick layer deposition Additionally Di-N-Octyl Dichlorosilane offers a more stable deposition rate that is less sensitive to minor temperature fluctuations which significantly lowers rejection rates by ensuring consistent layer thickness This stability and efficiency make it easier to handle and more effective in enhancing yields despite its flammable and toxic nature which requires careful handling and storage under specific conditions

Custom Reviews

November 25, 2024

Efficient and Reliable for Epitaxial Deposition

Using Di-N-Ctyl Dichlorosilane in research was a game-changer. It delivered consistent results for my epitaxial silicon growth, outperforming other reagents in efficiency and reliability. Highly recommended for anyone in the semiconductor field.

※ Please kindly noted that this product is for research use only.