Tri-T-Butoxysilanol

Catalog Number	ACM18166433-5
CAS Number	18166-43-3
Structure
Synonyms	TRI-T-BUTOXYSILANOL;TRIS(TERT-BUTOXY)SILANOL;TRIS(T-BUTOXY)SILANOL;Tri-tert-butoxysilanol;Silicic acid, tris(1,1-diMethylethyl) ester;Tri-tert-butyl hydrogen orthosilicate;Tri-t-butoxysilanol (99.999%-Si) PURATREM;Tri-t-butoxysilanol (99.999%-Si) PURATREM
IUPAC Name	hydroxy-tris[(2-methylpropan-2-yl)oxy]silane
Molecular Weight	264.44 g/mol
Molecular Formula	C12H28O4Si
Canonical SMILES	CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C
InChI Key	HLDBBQREZCVBMA-UHFFFAOYSA-N
Boiling Point	205-210ºC(lit.)
Melting Point	63-65ºC(lit.)
Flash Point	113.1ºC
Purity	96%
Density	0.947g/cm³
Application	Tri-T-Butoxysilanol serves as a crucial silicon oxide source for atomic layer deposition (ALD) enabling the creation of highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates This product is particularly effective when used in conjunction with tetrakis(dimethylamino)-hafnium vapor and other metal alkyl amides for the vapor phase deposition of hafnium silicate glass films and various metal silicates Its versatility makes it an ideal precursor for the deposition of silica supporting the development of advanced materials through precise vapor deposition processes
Exact Mass	264.17600
Packaging	10 g; 100 g;

Custom Reviews

November 03, 2024

Highly Efficient for ALD Applications

Tri-T-Butoxysilanol from Alfa Chemistry is excellent for vapor phase deposition, producing high-quality silicon dioxide and aluminum oxide nanolaminates. Its reliable performance in creating hafnium silicate glass films proved invaluable in my research.

※  Please kindly noted that this product is for research use only.

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