| Catalog Number |
ACM18166433 |
| CAS Number |
18166-43-3 |
| Structure |
 |
| Synonyms |
TRI-T-BUTOXYSILANOL;TRIS(TERT-BUTOXY)SILANOL;TRIS(T-BUTOXY)SILANOL;Tri-tert-butoxysilanol;Silicic acid, tris(1,1-diMethylethyl) ester;Tri-tert-butyl hydrogen orthosilicate;Tri-t-butoxysilanol (99.999%-Si) PURATREM;Tri-t-butoxysilanol (99.999%-Si) PURATREM |
| IUPAC Name |
hydroxy-tris[(2-methylpropan-2-yl)oxy]silane |
| Molecular Weight |
264.44 g/mol |
| Molecular Formula |
C12H28O4Si |
| Canonical SMILES |
CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C |
| InChI Key |
HLDBBQREZCVBMA-UHFFFAOYSA-N |
| Boiling Point |
205-210ºC(lit.) |
| Melting Point |
63-65ºC(lit.) |
| Flash Point |
113.1ºC |
| Purity |
96% |
| Density |
0.947g/cm³ |
| Application |
Tri-T-Butoxysilanol serves as a crucial silicon oxide source for atomic layer deposition (ALD) enabling the creation of highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates This product is particularly effective when used in conjunction with tetrakis(dimethylamino)-hafnium vapor and other metal alkyl amides for the vapor phase deposition of hafnium silicate glass films and various metal silicates Its versatility makes it an ideal precursor for the deposition of silica supporting the development of advanced materials through precise vapor deposition processes |
| Exact Mass |
264.17600 |
| Packaging |
10 g; 100 g; |
